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HMC553_09 PDF预览

HMC553_09

更新时间: 2022-11-07 17:00:43
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HITTITE /
页数 文件大小 规格书
6页 212K
描述
GaAs MMIC FUNDAMENTAL MIXER, 7 - 14 GHz

HMC553_09 数据手册

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HMC553  
v02.1007  
GaAs MMIC FUNDAMENTAL  
MIXER, 7 - 14 GHz  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
The die should be attached directly to the ground plane eutectically or with  
0.102mm (0.004”) Thick GaAs MMIC  
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).  
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film  
substrates are recommended for bringing RF to and from the chip (Figure 1). If  
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should  
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface  
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick  
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then  
attached to the ground plane (Figure 2).  
3 mil Ribbon Bond  
0.076mm  
(0.003”)  
RF Ground Plane  
4
Microstrip substrates should be brought as close to the die as possible in order to  
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).  
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is  
recommended to minimize inductance on RF, LO & IF ports.  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
Figure 1.  
Handling Precautions  
Follow these precautions to avoid permanent damage.  
0.102mm (0.004”) Thick GaAs MMIC  
Storage: All bare die are placed in either Waffle or Gel based ESD protective  
containers, and then sealed in an ESD protective bag for shipment. Once the  
sealed ESD protective bag has been opened, all die should be stored in a dry  
nitrogen environment.  
3 mil Ribbon Bond  
0.076mm  
(0.003”)  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean  
the chip using liquid cleaning systems.  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
RF Ground Plane  
Transients: Suppress instrument and bias supply transients while bias is applied.  
Use shielded signal and bias cables to minimize inductive pick-up.  
0.150mm (0.005”) Thick  
Moly Tab  
General Handling: Handle the chip along the edges with a vacuum collet or with  
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and  
should not be touched with vacuum collet, tweezers, or fingers.  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
Figure 2.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting  
surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature  
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip  
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for  
attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the  
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage  
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use  
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on  
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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