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HMC449_09

更新时间: 2022-11-07 16:40:25
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HITTITE 输出元件倍频器
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6页 235K
描述
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT

HMC449_09 数据手册

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HMC449  
v01.1007  
GaAs MMIC x2 ACTIVE FREQUENCY  
MULTIPLIER, 27 - 33 GHz OUTPUT  
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs  
The die should be attached directly to the ground plane eutectically or with  
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).  
0.102mm (0.004”) Thick GaAs MMIC  
2
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film  
substrates are recommended for bringing RF to and from the chip (Figure 1). If  
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should  
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the  
surface of the substrate. One way to accomplish this is to attach the 0.102mm  
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)  
which is then attached to the ground plane (Figure 2).  
Wire 3 mil Ribbon Bond  
0.076mm  
(0.003”)  
RF Ground Plane  
Microstrip substrates should be brought as close to the die as possible in order  
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3  
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12  
mils) is recommended to minimize inductance on RF, LO & IF ports.  
0.127mm (0.005”) Thick Alumina  
Thin Film Substrate  
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer  
capacitor (mounted eutectically or by conductive epoxy) placed no further than  
0.762mm (30 Mils) from the chip is recommended.  
Figure 1.  
Handling Precautions  
0.102mm (0.004”) Thick GaAs MMIC  
Follow these precautions to avoid permanent damage.  
Ribbon Bond  
Storage: All bare die are placed in either Waffle or Gel based ESD protective  
containers, and then sealed in an ESD protective bag for shipment. Once the  
sealed ESD protective bag has been opened, all die should be stored in a dry  
nitrogen environment.  
0.076mm  
(0.003”)  
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean  
the chip using liquid cleaning systems.  
RF Ground Plane  
Storage: All bare die are placed in either Waffle or Gel based ESD protective  
containers, and then sealed in an ESD protective bag for shipment. Once the  
sealed ESD protective bag has been opened, all die should be stored in a dry  
nitrogen environment.  
0.150mm (0.005”) Thick  
Moly Tab  
0.254mm (0.010”) Thick Alumina  
Thin Film Substrate  
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.  
Figure 2.  
Transients: Suppress instrument and bias supply transients while bias is applied.  
Use shielded signal and bias cables to minimize inductive pick-up.  
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the  
chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.  
Mounting  
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The  
mounting surface should be clean and flat.  
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature  
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the  
chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required  
for attachment.  
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the  
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.  
Wire Bonding  
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of  
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum  
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or  
substrate. All bonds should be as short as possible <0.31mm (12 mils).  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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