Datasheet > HMC341LC3B

HMC341LC3B

更新时间： 2024-01-23 03:28:12

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	296K
描述
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz

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技术参数
数据手册

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HMC341LC3B 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC12,.12SQ,20
针数：	12	Reach Compliance Code：	compliant
风险等级：	1.27	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	12
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	CERAMIC	封装等效代码：	LCC12,.12SQ,20
电源：	3 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC341LC3B 数据手册

HMC341LC3B

v00.0905

SMT GaAs PHEMT MMIC

LOW NOISE AMPLIFIER, 21 - 29 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+5.5 Vdc

Vdd (Vdc)

Idd (mA)

RF Input Power (RFin)(Vdd = +3.0 Vdc)

Channel Temperature

+5 dBm

+2.7

175 °C

+3.0

Continuous Pdiss (T= 85 °C)

(derate 5.43 mW/°C above 85 °C)

+4.0

0.489 W

+5.0

Thermal Resistance

(channel to ground paddle)

184 °C/W

Note: Ampliﬁer will operate over full voltage ranges shown above.

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.

7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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