Datasheet > 射频和微波 > 射频/微波放大器> HMC318MS8G

HMC318MS8G

更新时间： 2024-02-16 02:50:17

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
6页	218K
描述
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz

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技术参数
数据手册

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HMC318MS8G 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	针数：	8
Reach Compliance Code：	not_compliant	风险等级：	5.72
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

HMC318MS8G 数据手册

HMC318MS8G

v00.0900

MICROWAVE CORPORATION

GaAs MMIC LOW NOISE AMPLIFIER

with AGC, 5.0 - 6.0 GHz

Gain Control

Absolute Maximum Ratings

Typical

Ictl (uA)

Drain Bias Voltage (Vdd)

+7.0 Vdc

Vctl (Vdc)

Gain State

Control Voltage Range (Vctl)

-0.2 to Vdd

Maximum

Minimum

RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm

Vdd

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 9.76 mW/°C above 85 °C)

0.634 W

Thermal Resistance

(channel to ground paddle)

102 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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