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HMC221E PDF预览

HMC221E

更新时间: 2024-02-20 06:32:39
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
6页 196K
描述
GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz

HMC221E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SOT-26, SMT, 6 PIN
Reach Compliance Code:compliant风险等级:5.71
其他特性:CMOS/TTL COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT最大插入损耗:1.1 dB
JESD-609代码:e3最大工作频率:3000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:SPDT
端子面层:Matte Tin (Sn)Base Number Matches:1

HMC221E 数据手册

 浏览型号HMC221E的Datasheet PDF文件第1页浏览型号HMC221E的Datasheet PDF文件第2页浏览型号HMC221E的Datasheet PDF文件第3页浏览型号HMC221E的Datasheet PDF文件第4页浏览型号HMC221E的Datasheet PDF文件第6页 
HMC221 / 221E  
v02.0700  
GaAs MMIC SOT26 SPDT  
SWITCH, DC - 3 GHz  
Typical Application Circuit  
10  
Notes:  
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.  
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS logic gates.  
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.  
4. Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 46  

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