Datasheet > HMC220BMS8GE

HMC220BMS8GE

更新时间： 2024-01-21 00:49:07

品牌	Logo	应用领域
亚德诺 - ADI		局域网射频微波
页数	文件大小	规格书
19页	345K
描述
5 GHz to 12 GHz GaAs, MMIC, Fundamental Mixer

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技术参数
数据手册

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HMC220BMS8GE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	针数：	8
Reach Compliance Code：	compliant	风险等级：	2.19
Samacsys Description：	RF Mixer 5-12 GHz DBL-BAL Mixer	特性阻抗：	50 Ω
构造：	COMPONENT	最大变频损耗：	13 dB
最大输入功率 (CW)：	25 dBm	最大工作频率：	12000 MHz
最小工作频率：	5000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	DOUBLE BALANCED
Base Number Matches：	1

HMC220BMS8GE 数据手册

HMC220B

Data Sheet

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE

Table 2.

Thermal performance is directly linked to printed circuit board

(PCB) design and operating environment. Careful attention to

PCB thermal design is required.

Parameter

Rating

RF Input Power

LO Input Power

IF Input Power

IF Source and Sink Current

Continuous Power Dissipation, P_DISS

(T_A= 85°C, Derate 10.81 mW/°C Above

85°C)

Maximum Junction Temperature

Maximum Peak Reflow Temperature (MSL1)¹235°C

25 dBm

3 mA

Table 3. Thermal Resistance

Package Type

RH-8-3¹

θ_JA

θ_JC

Unit

211 mW

104.7

300

°C/W

¹Thermal impedance simulated values are based on JEDEC 2S2P test board

with 3 x 3 thermal vias. See JEDEC JESD51-12 for additional information.

130°C

ESD CAUTION

Operating Temperature Range

Storage Temperature Range

−40°C to +85°C

−65°C to +125°C

Electrostatic Discharge (ESD) Sensitivity

Human Body Model (HBM)

Field Induced Charged Device Model

(FICDM)

2000 V (Class 2)

750 V (Class C4)

¹See the Ordering Guide section.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

Rev. A | Page 4 of 18

1 2 3 456 7 8...19

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