0.01 GHz to 20 GHz, Ultra Wideband
Power Amplifier Module
HMC-C582
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
+15V
High gain: 24 dB
P1dB output power: 25 dBm, typical
Single 15 V supply
Hermetically sealed
RF IN
RF OUT
Field replaceable SMA connector
−40°C to +75°C operating temperature range
HMC-C582
APPLICATIONS
GND
Telecommunications infrastructure
Microwave radios and VSATs
Military and space
Figure 1.
Test and measurement instrumentation
Fiber optics
GENERAL DESCRIPTION
The HMC-C582 is a gallium arsenide (GaAs), monolithic micro-
wave integrated circuit (MMIC), pseudomorphic high electron
mobility transfer (pHEMT) power amplifier in a miniature,
hermetic module with replaceable SMA connectors that operates
between 0.01 GHz and 20 GHz. The amplifier provides typically
24 dB of gain, up to 36 dBm output IP3, and up to 26 dBm of
output power at 1 dB gain compression.
Gain flatness is excellent from 0.01 GHz to 20 GHz, making the
HMC-C582 ideal for electronic warfare (EW), electronic counter-
measures (ECM), radar, fiber optic, and test equipment app-
lications. The wideband amplifier inputs/outputs (I/Os) are
internally matched to 50 Ω and are dc blocked. Integrated voltage
regulators allow flexible biasing and sequencing control for
robust operation.
Rev. 0
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