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HMABAGR7A2R4N-WRT4 PDF预览

HMABAGR7A2R4N-WRT4

更新时间: 2023-12-06 20:01:26
品牌 Logo 应用领域
海力士 - HYNIX /
页数 文件大小 规格书
65页 1418K
描述
RDIMM

HMABAGR7A2R4N-WRT4 数据手册

 浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第1页浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第2页浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第4页浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第5页浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第6页浏览型号HMABAGR7A2R4N-WRT4的Datasheet PDF文件第7页 
Description  
SK hynix Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line  
Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.  
These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as  
servers and workstations.  
Features  
• Power Supply: VDD=1.2V (1.14V to 1.26V)  
• VDDQ = 1.2V (1.14V to 1.26V)  
• VPP - 2.5V (2.375V to 2.75V)  
• VDDSPD=2.25V to 2.75V  
• Functionality and operations comply with the DDR4 3DS SDRAM datasheet  
• 16 internal banks  
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-  
ferent bank group accesses are available  
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400  
• Bi-Directional Differential Data Strobe  
• 8 bit pre-fetch  
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)  
• Supports ECC error correction and detection  
• On-Die Termination (ODT)  
• Temperature sensor with integrated SPD  
• This product is in compliance with the RoHS directive.  
• Per DRAM Addressability is supported  
• Internal Vref DQ level generation is available  
• Write CRC is supported at all speed grades  
• CA parity (Command/Address Parity) mode is supported  
Ordering Information  
# of  
ranks  
Part Number  
Density  
Organization  
Component Composition  
HMABAGR7A2R4N-WR/XS  
128GB  
16Gx72  
TSV 2Hi 8Gx4(H5ANBG4TA2R)*36  
4
Rev. 1.0 / Feb.2020  
3

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