Datasheet > HMAA4GU7CJR8N-XNT0

HMAA4GU7CJR8N-XNT0

更新时间： 2023-12-06 20:01:29

品牌	Logo	应用领域
海力士 - HYNIX		/
页数	文件大小	规格书
80页	2678K
描述
ECC-UDIMM

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Description

SK hynix Unbuffered DDR4 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line

Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.

These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as

PCs and workstations.

Features

• Power Supply: VDD=1.2V (1.14V to 1.26V)

• VDDQ = 1.2V (1.14V to 1.26V)

• VPP - 2.5V (2.375V to 2.75V)

• VDDSPD=2.25V to 3.6V

• Functionality and operations comply with the DDR4 SDRAM datasheet

• 16 internal banks

• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-

ferent bank group accesses are available

• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600

• Bi-Directional Differential Data Strobe

• 8 bit pre-fetch

• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

• Supports ECC error correction and detection

• On-Die Termination (ODT)

• Temperature sensor with integrated SPD for ECC UDIMM

• This product is in compliance with the RoHS directive.

• Per DRAM Addressability is supported

• Internal Vref DQ level generation is available

Ordering Information

# of

ranks

Part Number

Density

Organization

Component Composition

HMAA1GU6CJR6N - VK/WM/XN

HMAA2GU6CJR8N - VK/WM/XN

HMAA2GU7CJR8N - VK/WM/XN

HMAA4GU6CJR8N - VK/WM/XN

HMAA4GU7CJR8N - VK/WM/XN

8GB

16GB

32GB

1Gx64

2Gx64

2Gx72

4Gx64

4Gx72

1Gx16(H5ANAG6NCJR)*4

2Gx8(H5ANAG8NCJR)*8

2Gx8(H5ANAG8NCJR)*9

2Gx8(H5ANAG8NCJR)*16

2Gx8(H5ANAG8NCJR)*18

Rev. 1.5 / Jul.2020

1 234 5 6 7...80

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