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HMAA4GS7AJR8N-WMT0 PDF预览

HMAA4GS7AJR8N-WMT0

更新时间: 2023-12-06 20:03:59
品牌 Logo 应用领域
海力士 - HYNIX /
页数 文件大小 规格书
73页 1539K
描述
ECC-SODIMM

HMAA4GS7AJR8N-WMT0 数据手册

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Symbol  
Type  
Function  
Address Inputs: Provide the row address for ACTIVATE Commands and the column  
address for Read/Write commands to select one location out of the memory array in the  
A0 - A16  
Input respective bank. A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 have  
additional functions. See other rows. The address inputs also provide the op-code during  
Mode Register Set commands.  
Auto-precharge: A10 is sampled during Read/Write commands to determine whether  
Autoprecharge should be performed to the accessed bank after the Read/Write  
operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a  
Precharge command to determine whether the Precharge applies to one bank (A10  
A10 / AP  
Input  
LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected  
by bank addresses.  
Burst Chop: A12/BC_n is sampled during Read and Write commands to determine if  
Input burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped).  
See command truth table for details.  
A12 / BC_n  
RESET_n  
CMOS Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive  
Input when RESET_n is HIGH. RESET_n must be HIGH during normal operation.  
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then  
Input/ CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the  
Output internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor  
specific data sheets to determine which DQ is used.  
DQ  
Data Strobe: output with read data, input with write data. Edge-aligned with read data,  
centered in write data. DDR4 SDRAMs support differential data strobe only and does not  
support single-ended.  
Input/  
Output  
DQS_t, DQS_c,  
Command and Address Parity Input : DDR4 Supports Even Parity check in DRAMs with  
MR setting. Once it’s enabled via Register in MR5, then DRAM calculates Parity with  
Input ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A16-A0. Input parity  
should be maintained at the rising edge of the clock and at the same time with  
command & address with CS_n LOW.  
PARITY  
ALERT: It has multiple functions, such as CRC error flag, Command and Address Parity  
error flag, as an Output signal. If there is an error in CRC, then ALERT_n goes LOW for  
the period time interval and goes back HIGH. If there is an error in Command Address  
Output Parity Check, then ALERT_n goes LOW for a relatively long period until on going DRAM  
internal recovery transaction is complete.  
ALERT_n  
Using this signal or not is dependent on the system.  
This is an open drain signal. It requires a pullup resistor on the system.  
EVENT_n  
SAVE_n  
Output I2C thermal event indicator. Open drain, requires a pullup resistor on the system.  
Input/ Not used on SODIMMs. SODIMMs will have no connection to this pin. See specifications  
Output of NVDIMMs for signal description.  
Bus clock used to strobe data into and out of I2C devices. Open drain and requires a  
pullup resistor on the system.  
SCL  
Input  
Input/  
SDA  
I2C data. Open drain and requires a pullup resistor on the system.  
Output  
Rev. 1.1 / Aug.2019  
7

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