Electrical Characteristics at TA = 25°C
Device
HLMP-
Symbol
Description
Min.
Typ.
Max.
Units Test Conditions
IV
Luminous Intensity
1320
1321
8.6
8.6
30
30
mcd
IF = 10 mA
(Figure 3)
1420
1421
9.2
9.2
15
15
mcd
mcd
Deg.
IF = 10 mA
(Figure 8)
1520
1521
6.7
6.7
22
22
IF = 10 mA
(Figure 3)
2q1/2
Including Angle Between
Half Luminous Intensity
Points
All
45
IF = 10 mA
See Note 1
(Figures 6, 11, 16, 21)
lPEAK
Peak Wavelength
132x
635
nm
Measurement
at Peak (Figure 1)
142X
152X
583
565
Dl1/2
Spectral Line Halfwidth
Dominant Wavelength
Speed of Response
Capacitance
132x
40
nm
nm
ns
142X
152X
36
28
ld
132x
626
See Note 2 (Figure 1)
142X
152X
585
569
ts
132x
90
142X
152X
90
500
C
132x
11
pF
VF = 0; f = 1 MHz
142X
152X
15
18
RqJ-PIN
Thermal Resistance
Forward Voltage
All
290
°C/W
V
Junction to
Cathode Lead
VF
132x
1.9
2.4
IF = 10 mA
142X
152X
2.0
2.1
2.4
2.7
VR
Reverse Breakdown Voltage
Luminous Efficacy
All
5.0
V
IR = 100 µA
hV
132x
145
lumens See Note 3
watt
142X
152X
500
595
Notes:
1. q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength, ld, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of
the device.
3. Radiant intensity, Ie, in watts/steradian, may be found from the equation Ie = lv/hv, where lv is the luminous intensity in candelas and hv is the
luminous efficacy in lumens/watt.
3