HMC510LP5 / 510LP5E
v04.0811
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 8.45 - 9.55 GHz
Typical Applications
Features
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
Dual Output: Fo = 8.45 - 9.55 GHz
Fo/2 = 4.225 - 4.775 GHz
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
Pout: +13 dBm
Phase Noise: -116 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
• Military End-Use
Functional Diagram
General Description
The HMC510LP5 & HMC510LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC510LP5 & HMC510LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
temperature, shock, and process due to the oscillator’s
monolithic structure. Power output is +13 dBm typical
from a +5V supply voltage. The prescaler and RF/2
functions can be disabled to conserve current if not
required. The voltage controlled oscillator is packaged
in a leadless QFN 5x5 mm surface mount package,
and requires no external matching components.
8
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
8.45 - 9.55
4.225 - 4.775
GHz
GHz
Frequency Range
Power Output
RFOUT
RFOUT/2
RFOUT/4
+10
+8
-8
+15
+14
-4
dBm
dBm
dBm
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
-116
dBc/Hz
Tune Voltage
Vtune
2
13
360
10
V
Supply Current
Icc(Dig) + Icc(Amp) + Icc(RF)
270
315
2
mA
µA
dB
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
1/2
2nd
3rd
40
15
40
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
6
MHz pp
MHz/V
MHz/°C
20
0.8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 1