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HMC435MS8G

更新时间: 2024-01-03 06:10:01
品牌 Logo 应用领域
HITTITE 开关光电二极管
页数 文件大小 规格书
6页 190K
描述
SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz

HMC435MS8G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:TSSOP8,.19
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.871dB压缩点:31 dBm
最大插入损耗:1.8 dB最小隔离度:30 dB
JESD-609代码:e0安装特点:SURFACE MOUNT
功能数量:1端子数量:8
最大工作频率:4000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP8,.19电源:5 V
射频/微波设备类型:SPDT子类别:RF/Microwave Switches
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HMC435MS8G 数据手册

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HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Typical Applications  
Features  
High Isolation: 60 dB @ 1 GHz  
50 dB @ 2 GHz  
The HMC435MS8G is ideal for:  
• Basestation Infrastructure  
• MMDS & 3.5 GHz WLL  
• CATV/CMTS  
Positive Control: 0/+5V  
51 dBm Input IP3  
Non-Reflective Design  
MS8G SMT Package, 14.8 mm2  
Test Instrumentation  
Functional Diagram  
General Description  
The HMC435MS8G is a non-reflective DC to 4  
GHz GaAs MESFET SPDT switch in a low cost  
8 lead MSOP8G surface mount package with an  
exposed ground paddle. The switch is ideal for  
cellular/PCS/3G basestation applications yielding  
50 to 60 dB isolation, low 0.8 dB insertion loss and  
+50 dBm input IP3. Power handling is excellent  
up through the 3.5 GHz WLL band with the switch  
offering a P1dB compression point of +31 dBm.  
On-chip circuitry allows positive voltage control of  
0/+5 Volts at very low DC currents.  
14  
Electrical Specifications,TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
0.8  
1.2  
1.5  
1.0  
1.5  
1.8  
dB  
dB  
dB  
Insertion Loss  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
56  
46  
43  
37  
30  
60  
50  
47  
41  
35  
dB  
dB  
dB  
dB  
dB  
Isolation (RFC to RF1/RF2)  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
15  
13  
11  
20  
17  
15  
dB  
dB  
dB  
Return Loss (On State)  
Return Loss (Off State)  
0.5 - 4.0 GHz  
0.5 - 4.0 GHz  
16  
27  
21  
31  
dB  
Input Power for 1 dB Compression  
dBm  
0.5 - 1.0 GHz  
0.5 - 2.5 GHz  
0.5 - 4.0 GHz  
48  
45  
41  
51  
48  
45  
Input Third Order Intercept  
(Two-Tone Input Power = +7 dBm Each Tone)  
dBm  
Switching Speed  
DC - 4.0 GHz  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
40  
60  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 230  

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