Datasheet > HERA1608G

HERA1608G

更新时间： 2024-02-26 23:04:03

品牌	Logo	应用领域
THINKISEMI		二极管化工功效局域网
页数	文件大小	规格书
2页	540K
描述
16.0 Ampere Glass Passivated Process High Efficiency Rectifiers

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中文翻译

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数据手册

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HERA1608G 数据手册

HERA1601G thru HERA1608G

Pb Free Plating Product

16.0 Ampere Glass Passivated Process High Efficiency Rectifiers

Unit : inch (mm)

TO-220AC

Features

ꢀ

Glass passivated chip junction

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.139(3.55)

MIN

.054(1.39)

.045(1.15)

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ

Case: Heatsink TO-220AC

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

.1(2.54)

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.1 gram approxiamtely

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HERA HERA HERA HERA HERA HERA HERA HERA

1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G

Symbol

Units

Type Number

Maximum Recurrent Peak Reverse Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

Maximum RMS Voltage

700

Maximum DC Blocking Voltage

100

1000

I_F(AV)

I_FSM

V_F

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method)

250

Maximum Instantaneous Forward Voltage (Note 1)

@ 16 A

1.0

1.3

1.7

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T_A=25 ℃

I_R

@ T_A=125 ℃

400

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance

Trr

120

℃

R_θJC

T_J

2.0

Operating Temperature Range

Storage Temperature Range

- 65 to + 150

℃

T_STG

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Page 1/2

http://www.thinkisemi.com/

Rev.04/2014

中文翻译

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与HERA1608G相关器件

型号	品牌	获取价格	描述	数据表
HERA162G	SURGE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, Silicon, TO-220, TO-220A, 2 PIN
HERA164G	SURGE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, Silicon, TO-220, TO-220A, 2 PIN
HERA165G	SURGE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, Silicon, TO-220, TO-220A, 2 PIN
HERA166G	SURGE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, Silicon, TO-220, TO-220A, 2 PIN
HERA801G	TSC	获取价格	8.0 AMPS. Glass Passivated High Efficient Rectifiers
HERA801G	RFE	获取价格	LEADED (THRU-HOLE) High Efficiency & Super Fast Rectifiers
HERA801G_1	TSC	获取价格	8.0 AMPS. Glass Passivated High Efficient Rectifiers
HERA801G_10	TSC	获取价格	8.0 AMPS. Glass Passivated High Efficient Rectifiers
HERA801G_11	TSC	获取价格	8.0AMPS. Glass Passivated High Efficient Rectifiers
HERA802G	TSC	获取价格	8.0 AMPS. Glass Passivated High Efficient Rectifiers

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