HER301G-K - HER308G-K
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated High Efficient Rectifier
FEATURES
KEY PARAMETERS
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
PARAMETER
IF(AV)
VRRM
VALUE
UNIT
3
A
V
50 - 1000
150
● High surge current capability
● Low power loss, high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
TJ MAX
°C
Package
Configuration
DO-201AD
Single die
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-201AD
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 1.1 g (approximately)
DO-201AD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
HER HER HER HER HER HER HER HER
PARAMETER
SYMBOL
301
302
303
304
305
306
307
308 UNIT
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
G-K
HER
Marking code on the device
301G 302G 303G 304G 305G 306G 307G 308G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
VRRM
VR(RMS)
IF(AV)
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
V
A
3
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
IFSM
125
A
Junction temperature
Storage temperature
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
1
Version:B1706