Datasheet > HE8550-C-AB3-B

HE8550-C-AB3-B

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
4页	56K
描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

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数据手册

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HE8550-C-AB3-B 数据手册

HE8550

PNP SILICON TRANSISTOR

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TYPICAL CHARACTERISTICS

Static Characteristics

DC Current Gain

V_CE=-1V

10³

10²

-0.5

-0.4

I_B=-3.0mA

-0.3

-0.2

I_B=-2.5mA

I_B=-2.0mA

I_B=-1.5mA

10¹

10⁰

I_B=-1.0mA

-0.1

IB=-0.5mA

-10^-1

-10⁰

-10¹

-10²

-10³

-0

-0.4

-0.8 -1.2 -1.6 -2.0

Collector-Emitter Voltage ( V)

Collector Current, I_C(mA)

Base-Emitter on Voltage

V_CE=-1V

Saturation Voltage

I_C=10*I_B

-10³

-10²

-10⁴

-10³

V_BE(SAT)

-10¹

-10⁰

-10²

-10¹

V_CE(SAT)

-10^-1

-10⁰

-10¹

-10²

-10³

-0.2 -0.4

-0.6

-0.8 -1.0

Collector Curren,t I_C(mA)

Base-Emitter Voltage (V)

Current Gain-Bandwidth Product

V_CE=-10V

Collector Output Capacitance

f=1MHz

10³

10²

10³

10²

I_E=0

10¹

10⁰

10¹

10⁰

-10⁰

-10¹

-10²

-10³

-10⁰

-10¹

-10²

-10³

Collector Current, I_C(mA)

Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD

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