5秒后页面跳转
HDP10A04X PDF预览

HDP10A04X

更新时间: 2024-10-01 01:09:39
品牌 Logo 应用领域
SEMIHOW /
页数 文件大小 规格书
3页 546K
描述
Schottky Barrier Rectifiers

HDP10A04X 数据手册

 浏览型号HDP10A04X的Datasheet PDF文件第2页浏览型号HDP10A04X的Datasheet PDF文件第3页 
JAN 2010  
30-60 VOLTS  
HDP10A03x Thru HDP10A06x  
10 AMPERES  
Schottky Barrier Rectifiers  
Using the Schottky Barrier principle with a Molybdenum barrier metal.  
These state-of-the-art geometry features epitaxial construction with oxide  
passivation and metal overlay contact. Ideally suited for low voltage, high  
frequency rectification, or as free wheeling and polarity protection diodes.  
TO-220AB  
FEATURES  
1
2
3
.
.
.
.
.
.
.
.
.
.
.
.
Low Forward Voltage.  
Low Switching noise.  
High Current Capacity  
Guarantee Reverse Avalanche.  
Guard-Ring for Stress Protection.  
Low Power Loss & High efficiency.  
150Operating Junction Temperature  
Low Stored Charge Majority Carrier Conduction.  
Plastic Material used Carries Underwriters Laboratory  
Flammability Classification 94V-O  
ESD: 8KV(Min.) Human-Body Model  
In compliance with EU RoHs 2002/95/EC directives  
Maximum Ratings  
Value  
Symbol  
Parameter  
Units  
03 035 04 045 05 06  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30 35 40 45 50 60  
V
VR(RMS)  
R.M.S Reverse Voltage  
21 25 28 32 35 42  
V
A
A
5.0  
10  
Average Rectifier Forward Current  
IF(AV)  
IFM  
- Total Device (Rated VR), TC=125  
Peak Repetitive Forward Current  
(Rate VR, Square Wave, 20kHz)  
10  
A
Non-Repetitive Peak Surge Current (Surge applied at  
rate load conditions half ware, single phase, 60Hz)  
IFSM  
125  
A
TJ, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Electrial Characteristics  
Value  
Symbol  
Parameter  
Units  
03 035 04 045 05 06  
Maximum Instantaneous Forward Voltage  
VF  
0.55  
0.47  
0.65  
0.55  
V
- ( IF =5.0 Amp TC = 25)  
- ( IF =5.0 Amp TC = 100)  
Maximum Instantaneous Reverse Current  
- ( Rated DC Voltage, TC = 25)  
- ( Rated DC Voltage, TC = 125)  
IR  
0.5  
20  
mA  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
4.2  
Units  
℃/W  
RθJC  
Junction-to-Case  
SEMIHOW REV.A0,Nov 2010  

与HDP10A04X相关器件

型号 品牌 获取价格 描述 数据表
HDP10A05X SEMIHOW

获取价格

Schottky Barrier Rectifiers
HDP10A06X SEMIHOW

获取价格

Schottky Barrier Rectifiers
HDP126-0.0549OHM-FB RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0549ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.0549OHM-FBQ RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0549ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.0549OHM-FBW RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0549ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.0562OHM-FBW RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0562ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.056OHM-GBW RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.056ohm, 300V, 2% +/-Tol, 200ppm/Cel, Through
HDP126-0.0649OHM-FBW RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0649ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.0681OHM-FB RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.0681ohm, 300V, 1% +/-Tol, 200ppm/Cel, Throug
HDP126-0.075OHM-JB RCD

获取价格

Fixed Resistor, Metal Glaze/thick Film, 2W, 0.075ohm, 300V, 5% +/-Tol, 200ppm/Cel, Through