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HD4074329 PDF预览

HD4074329

更新时间: 2024-01-16 16:29:10
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
103页 382K
描述
microcomputer designed to increase program productivity

HD4074329 技术参数

生命周期:Transferred零件包装代码:DIP
包装说明:DIP, SDIP64,.75针数:64
Reach Compliance Code:unknown风险等级:5.48
具有ADC:YES地址总线宽度:
位大小:4CPU系列:HMCS400
最大时钟频率:4.5 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:R-PDIP-T64长度:57.6 mm
I/O 线路数量:35端子数量:64
片上程序ROM宽度:10最高工作温度:75 °C
最低工作温度:-20 °CPWM 通道:NO
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:SDIP64,.75封装形状:RECTANGULAR
封装形式:IN-LINE电源:3.3/5 V
认证状态:Not QualifiedRAM(字节):268
ROM(单词):16384ROM可编程性:OTPROM
座面最大高度:5.08 mm速度:0.56 MHz
子类别:Microcontrollers最大压摆率:6 mA
最大供电电压:5.5 V最小供电电压:2.9 V
标称供电电压:3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL EXTENDED
端子形式:THROUGH-HOLE端子节距:1.778 mm
端子位置:DUAL宽度:19.05 mm
uPs/uCs/外围集成电路类型:MICROCONTROLLERBase Number Matches:1

HD4074329 数据手册

 浏览型号HD4074329的Datasheet PDF文件第2页浏览型号HD4074329的Datasheet PDF文件第3页浏览型号HD4074329的Datasheet PDF文件第4页浏览型号HD4074329的Datasheet PDF文件第5页浏览型号HD4074329的Datasheet PDF文件第6页浏览型号HD4074329的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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