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HCS21DMSR PDF预览

HCS21DMSR

更新时间: 2024-01-12 10:54:10
品牌 Logo 应用领域
英特矽尔 - INTERSIL 触发器逻辑集成电路
页数 文件大小 规格书
8页 187K
描述
Radiation Hardened Dual 4-Input AND Gate

HCS21DMSR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DFP, FL14,.3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.74
Is Samacsys:N其他特性:RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY
系列:HC/UHJESD-30 代码:R-CDFP-F14
JESD-609代码:e0负载电容(CL):50 pF
逻辑集成电路类型:AND GATE功能数量:2
输入次数:4端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装等效代码:FL14,.3封装形状:RECTANGULAR
封装形式:FLATPACK电源:5 V
Prop。Delay @ Nom-Sup:22 ns传播延迟(tpd):20 ns
认证状态:Not Qualified施密特触发器:NO
筛选级别:38535V;38534K;883S子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:200k Rad(Si) VBase Number Matches:1

HCS21DMSR 数据手册

 浏览型号HCS21DMSR的Datasheet PDF文件第2页浏览型号HCS21DMSR的Datasheet PDF文件第3页浏览型号HCS21DMSR的Datasheet PDF文件第4页浏览型号HCS21DMSR的Datasheet PDF文件第5页浏览型号HCS21DMSR的Datasheet PDF文件第6页浏览型号HCS21DMSR的Datasheet PDF文件第8页 
HCS21MS  
AC Load Circuit  
AC Timing Diagrams  
DUT  
TEST  
POINT  
VIH  
INPUT  
VS  
CL  
RL  
VIL  
TPLH  
TPHL  
VOH  
VOL  
VOH  
VOL  
CL = 50pF  
VS  
OUTPUT  
RL = 500Ω  
TTLH  
TTHL  
80%  
80%  
20%  
20%  
OUTPUT  
AC VOLTAGE LEVELS  
PARAMETER  
VCC  
HCS  
4.50  
4.50  
2.25  
0
UNITS  
V
V
V
V
V
VIH  
VS  
VIL  
GND  
0
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Spec Number 518762  
59  

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