Datasheet > HCD70R600S

HCD70R600S

更新时间： 2022-02-26 12:42:04

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描述
700V N-Channel Super Junction MOSFET

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数据手册

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HCD70R600S 数据手册

Electrical Characteristics T_J=25 qC unless otherwise specified

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

On Characteristics

V_GS

Gate Threshold Voltage

_DS= V_GS, I_D= 250 Ꮃ

2.8

4.2

0.6

Static Drain-Source

On-Resistance

R_DS(ON)

V_GS= 10 V, I_D= 3.5 A

0.54

Off Characteristics

BV_DSSDrain-Source Breakdown Voltage

_GS= 0 V, I_D= 250 Ꮃ

700

V_DS= 700 V, V_GS= 0 V

Ꮃ

Ꮂ

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_DS= 560 V, T_J= 125୅

_GS= ρ20 V, V_DS= 0 V

100

ρ100

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

500

250

Ꮔ

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0 V, V_DS= 0 V, f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Time

4.0

5.5

Ꭸ

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

_DS= 350 V, I_D= 7.3 A,

R_G= 25

Ꭸ

Q_g

Q_gs

Q_gd

V_DS= 560 V, I_D= 7.3 A,

V_GS= 10 V

Source-Drain Diode Maximum Ratings and Characteristics

I_S

I_SM

V_SD

trr

Continuous Source-Drain Diode Forward Current

Pulsed Source-Drain Diode Forward Current

7.3

1.3

Source-Drain Diode Forward Voltage I_S= 7.3 A, V_GS= 0 V

Reverse Recovery Time

I_S= 3.5 A, V_GS= 0 V

250

Ꭸ

di_F/dt = 100 A/ȝV

Reverse Recovery Charge

Qrr

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. I_AS=2A, V_DD=50V, R_G=25:, Starting T_J=25qC

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