June 2015
BVDSS = 700 V
RDS(on) typ = 0.54 ȍ
HCD70R600S / HCU70R600S
700V N-Channel Super Junction MOSFET
ID = 7.3 A
D-PAK
I-PAK
FEATURES
2
1
Originative New Design
1
3
2
3
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 16 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ꢀꢁꢁꢂꢃꢄꢅꢁȍꢁꢆ7\Sꢃꢇꢁ#9GS=10V
100% Avalanche Tested
HCD70R600S HCU70R600S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25 unless otherwise specified
Symbol
VDSS
Parameter
Value
Units
V
Drain-Source Voltage
Drain Current
700
7.3
– Continuous (TC = 25)
– Continuous (TC = 100)
A
ID
Drain Current
4.6
A
(Note 1)
IDM
Drain Current
– Pulsed
22
A
VGS
EAS
IAR
Gate-Source Voltage
ρ20
120
V
(Note 2)
(Note 1)
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
2.0
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25)*
0.5
mJ
V/ns
W
15
2.5
69
W
PD
Power Dissipation (TC = 25)
- Derate above 25
0.55
-55 to +150
W/
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RșJC
RșJA
RșJA
Junction-to-Case
--
--
--
1.8
Junction-to-Ambient*
Junction-to-Ambient
50
/W
110
* When mounted on the minimum pad size recommended (PCB Mount)
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