Datasheet > HCD65R600S

HCD65R600S

更新时间： 2022-02-26 12:42:04

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	265K
描述
650V N-Channel Super Junction MOSFET

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HCD65R600S 数据手册

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I_S

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_Scontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I_S

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_f

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

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