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H5TQ2G83AFR-G7C PDF预览

H5TQ2G83AFR-G7C

更新时间: 2023-01-02 20:03:02
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
30页 282K
描述
DDR DRAM, 256MX8, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82

H5TQ2G83AFR-G7C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:HALOGEN FREE AND ROHS COMPLIANT, FBGA-82
针数:82Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.73访问模式:MULTI BANK PAGE BURST
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B82
长度:11.1 mm内存密度:2147483648 bit
内存集成电路类型:DDR DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:82字数:268435456 words
字数代码:256000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:256MX8封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):1.575 V
最小供电电压 (Vsup):1.425 V标称供电电压 (Vsup):1.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:9.4 mm
Base Number Matches:1

H5TQ2G83AFR-G7C 数据手册

 浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第2页浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第3页浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第4页浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第5页浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第6页浏览型号H5TQ2G83AFR-G7C的Datasheet PDF文件第7页 
2Gb DDR3 SDRAM  
2Gb DDR3 SDRAM  
Lead-Free&Halogen-Free  
(RoHS Compliant)  
H5TQ2G43AFR-xxC  
H5TQ2G83AFR-xxC  
* Hynix Semiconductor reserves the right to change products or specifications without notice.  
Rev. 1.1 / Jul. 2010  
1

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