Datasheet > H27U518S2CTR-BC

H27U518S2CTR-BC

更新时间： 2022-04-12 05:22:05

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
37页	414K
描述
512 Mb NAND Flash

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数据手册

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H27U518S2CTR-BC 数据手册

1PrePreliminaryeee

H27U518S2C Series

512 Mbit (64 M x 8 bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

ELECTRONIC SIGNATURE

- 1st cycle : Manufacturer Code

- 2nd cycle : Device Code

NAND INTERFACE

- x8 bus width

- Address/ Data Multiplexing

- Pinout compatiblity for all densities

CHIP ENABLE DON’T CARE

- Simple interface with microcontroller

SUPPLY VOLTAGE

HARDWARE DATA PROTECTION

- 3.3 V device : Vcc = 2.7 V ~ 3.6 V

- Program/Erase locked during Power transitions.

MEMORY CELL ARRAY

DATA RETENTION

- (512 + 16) bytes x 32 pages x 4096 blocks

- 100,000 Program/Erase cycles (with 1bit/528byte ECC)

- 10 years Data Retention

PAGE SIZE

- (512 + 16 spare) Bytes

PACKAGE

- H27U518S2CTR-Bx

BLOCK SIZE

- (16 K + 512 spare) Bytes

: 48-Pin TSOP1 (12 × 20 × 1.2 mm)

- H27U518S2CTR-Bx (Lead & Halogen Free)

PAGE READ / PROGRAM

- Random access : 12 us (max.)

- Sequential access : 30 ns (min.)

- Page program time : 200 us (typ.)

COPY BACK PROGRAM

- Automatic block download without latency time

FAST BLOCK ERASE

- Block erase time : 1.5 ms (typ.)

STATUS REGISTER

- Normal Status Register (Read/Program/Erase)

- Extended Status Register (EDC)

Rev 1.0 / Dec. 2008

1 234 5 6 7...37

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