Datasheet > H2115H06A5B

H2115H06A5B

更新时间： 2024-01-02 10:12:01

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	124K
描述
Rectifier Diode, 1 Phase, 1 Element, Silicon, ROHS COMPLIANT PACKAGE-1

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H2115H06A5B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	R-XUUC-N1	针数：	1
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.40	风险等级：	5.76
应用：	GENERAL PURPOSE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-XUUC-N1	元件数量：	1
相数：	1	端子数量：	1
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

H2115H06A5B 数据手册

H2115H06A5B

Vishay High Power Products

HEXFRED^TM

Die in Wafer Form

FEATURES

RoHS

PRODUCT SUMMARY

COMPLIANT

• 100 % tested at probe

V_F

1.7 V maximum

• Available in tape and reel (upon request)

V_BR

600 V

Wafer

• Chip pack, and sawn on film (part number shown is for die

in waveform; contact factory for these other options)

• Designed and qualified for industrial level

GENERAL INFORMATION

The datasheet is based on Vishay HPP sample testing under

certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are

encouraged to perform testing in actual proposed packaged

and use conditions. Vishay HPP die products are tested

using Vishay HPP-based quality assurance procedures and

are manufactured using Vishay HPP’s established

processes. Programs for customer-specified testing are

available upon request. Vishay HPP has experienced

assembly yields of generally 95 % or greater for individual

die; however, customer’s results may vary. Estimates such

as those described and set forth in this datasheet for

semiconductor die will vary depending on a number of

packaging, handling, use and other factors. Sold die may not

perform on an equivalent basis to standard package

products and are therefore offered with a limited warranty as

described in Vishay HPP’s applicable standard terms and

conditions of sale. All Vishay HPP die sales are subject to

Vishay HPP’s applicable standard terms and conditions of

sale, which are available upon request.

ELECTRICAL CHARACTERISTICS - WAFER FORM (T_J= 25 °C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

1.7

UNITS

Forward voltage

V_FM

I_F= 15 A

600

Reverse breakdown voltage

Reverse leakage current

V_BR

I_R= 200 µA

I_RM

V_RRM= 600 V

µA

MECHANICAL DATA

Nominal back metal composition, thickness

Nominal front metal composition, thickness

Dimensions

Cr-Ni-Ag (1 kA - 2 kA - 3 kA)

99 % Al, 1 % Si (3 microns)

2.92 mm x 3.94 mm (0.115" x 0.115" [see drawing])

125 mm, with standard < 100 > flat

15 0.4 mils

Wafer diameter

Wafer thickness

Relevant die mechanical drawing number

Minimum street width

01-5161

100 microns

Reject ink dot size

0.25 mm diameter minimum

Recommended storage environment

Reference packaged part

Store in original container, in dessicated nitrogen, with no contamination

HFA15TB60

Document Number: 93906

Revision: 17-Jul-07

For technical questions, contact: die-wafer@vishay.com

www.vishay.com

12 3 4

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与H2115H06A5B相关器件

型号	品牌	获取价格	描述	数据表
H2115H06A5D	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, ROHS COMPLIANT PACKAGE-1
H2115H06A5F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, ROHS COMPLIANT PACKAGE-1
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H213002000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
H213004000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block

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