Datasheet > H11C4M

H11C4M

更新时间： 2024-09-28 11:03:39

品牌	Logo	应用领域
CENTRAL		可控硅
页数	文件大小	规格书
2页	206K
描述
PHOTO SCR OPTOCOUPLER

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中文翻译

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数据手册

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H11C4M 数据手册

Central

Semiconductor Corp.

H11C4M

DESCRIPTION:

PHOTO SCR OPTOCOUPLER

The Central Semiconductor H11C4M is a gallium-

arsenide infrared emitting Diode optically coupled

with a light activated silicon controlled rectifier in a

DIP-6 dual-in-line package. This device is designed

for applications requiring a high degree of isolation

between triggering and load circuits.

MARKING: H11C4M

FEATURES:

DIP-6 CASE

APPLICATIONS:

• Forward current I =50mA MAX (Input)

• Communications equipment

• Solid state relays

• On-State current I

=150mA (Input)

T(RMS)

• Reverse current I =10μA MAX (Input)

• Portable equipment

• Blocking voltage V

, V

=400V MAX (Output)

DRM RRM

• Low power logic circuits requiring

a high degree of input/output isolation

• Isolation test voltage 5000V

RMS

MAXIMUM RATINGS: (T =25°C)

Isolation Voltage

SYMBOL

UNITS

5000

10¹¹

-30 to +100

-55 to +125

ISO

RMS

Isolation Resistance (@ V =500V)

Operating Temperature Range

Storage Temperature Range

°C

stg

INPUT MAXIMUM RATINGS (LED): (T =25°C)

SYMBOL

UNITS

Continuous Forward Current

Continuous Reverse Voltage

Peak Forward Surge Current (tp=1μs)

Power Dissipation

5.0

1.0

FSM

OUTPUT MAXIMUM RATINGS (SCR): (T =25°C)

SYMBOL

, V

UNITS

Peak Repetitive Off-State Voltage

Peak Reverse Gate Voltage

RMS On-State Current

Peak On-State Current (tp=100μs)

Peak One Cycle Surge (tp=10ms)

400

6.0

150

DRM RRM

RGM

T(RMS)

5.0

TSM

INPUT ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

1.5

UNITS

μA

V =3.0V

I =10mA

V =0V, f=1.0MHz

R2 (8-December 2008)

中文翻译

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