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H11B1 PDF预览

H11B1

更新时间: 2024-01-21 09:18:45
品牌 Logo 应用领域
QT 光电输出元件
页数 文件大小 规格书
7页 142K
描述
PHOTODARLINGTON OPTOCOUPLERS

H11B1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.65Base Number Matches:1

H11B1 数据手册

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PHOTODARLINGTON OPTOCOUPLERS  
DESCRIPTION  
The CNX48U, H11BX, MOC8080 and TIL113 have a  
gallium arsenide infrared emitter optically coupled to a  
silicon planar photodarlington.  
CNX48U  
MOC8080 TIL113  
H11B1 H11B2 H11B255 H11B3  
FEATURES  
• High sensitivity to low input drive current  
• Meets or exceeds all JEDEC Registered Specifications  
• VDE 0884 approval available as a test option  
-add option .300. (e.g., H11B1.300)  
6
6
SCHEMATIC  
1
1
1
ANODE  
CATHODE  
N/C  
1
6
BASE  
APPLICATIONS  
• Low power logic circuits  
Telecommunications equipment  
• Portable electronics  
2
3
5
4
COLLECTOR  
EMITTER  
6
• Solid state relays  
• Interfacing coupling systems of different potentials and impedances.  
Parameter  
Symbol  
Device  
Value  
Units  
TOTAL DEVICE  
TSTG  
All  
-55 to +150  
°C  
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
TOPR  
TSOL  
All  
All  
-55 to +100  
260 for 10 sec  
250  
°C  
°C  
mW  
PD  
IF  
All  
All  
3.3  
mW/°C  
EMITTER  
100  
mA  
Continuous Forward Current  
Reverse Voltage  
VR  
All  
All  
6
V
A
Forward Current - Peak (300 µs, 2% Duty Cycle)  
LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
IF(pk)  
3.0  
100  
1.8  
30  
mW  
mW/°C  
PD  
All  
DETECTOR  
CNX48U, TIL113  
H11B1, H11B2  
H11B3  
25  
55  
BVCEO  
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
H11B255  
MOC8080  
CNX48U, H11B1  
H11B2, H11B3  
TIL113  
30  
55  
V
V
BVCBO  
H11B255  
MOC8080  
All  
Emitter-Collector Breakdown Voltage  
Detector Power Dissipation @ TA = 25°C  
Derate above 25°C  
BVECO  
PD  
7
V
150  
2.0  
mW  
All  
mW/°C  
6/1/00  
200042A  

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