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H11AV2S PDF预览

H11AV2S

更新时间: 2024-01-12 07:59:09
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 输出元件光电
页数 文件大小 规格书
6页 285K
描述
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, CASE 730C-04, 6 PIN

H11AV2S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CASE 730C-04, 6 PINReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.74
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:70 V
配置:SINGLE当前传输比率-最小值:50%
标称电流传输比:100%最大暗电源:50 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:7500 VJESD-609代码:e0
安装特点:SURFACE MOUNT元件数量:1
最大通态电流:0.15 A最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.15 W最长响应时间:0.000015 s
子类别:Optocoupler - Transistor Outputs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

H11AV2S 数据手册

 浏览型号H11AV2S的Datasheet PDF文件第2页浏览型号H11AV2S的Datasheet PDF文件第3页浏览型号H11AV2S的Datasheet PDF文件第4页浏览型号H11AV2S的Datasheet PDF文件第5页浏览型号H11AV2S的Datasheet PDF文件第6页 
Order this document  
by H11AV1/D  
SEMICONDUCTOR TECHNICAL DATA  
[CTR = 100% Min]  
GlobalOptoisolator  
[CTR = 50% Min]  
*Motorola Preferred Devices  
The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared  
emitting diode optically coupled to a monolithic silicon phototransistor detector.  
STYLE 1 PLASTIC  
Guaranteed 70 Volt V Minimum  
(BR)CEO  
‘A’ Suffix = 0.400Wide Spaced Leadform (Same as ‘T’ Suffix. Refer to Leadform  
Options Section in Opto Data Book.)  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
6
1
Applications  
STANDARD THRU HOLE  
CASE 730A–04  
General Purpose Switching Circuits  
Interfacing and coupling systems of different potentials and impedances  
Monitor and Detection Circuits  
Regulation and Feedback Circuits  
SCHEMATIC  
Solid State Relays  
1
2
3
6
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
5
4
Rating  
Symbol  
Value  
Unit  
INPUT LED  
Reverse Voltage  
V
6
Volts  
mA  
R
PIN 1. LED ANODE  
2. LED CATHODE  
3. N.C.  
Forward Current — Continuous  
I
F
60  
LED Power Dissipation @ T = 25°C  
with Negligible Power in Output Detector  
Derate above 25°C  
P
120  
mW  
A
D
4. EMITTER  
5. COLLECTOR  
6. BASE  
1.41  
mW/°C  
OUTPUT TRANSISTOR  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
V
V
70  
7
Volts  
Volts  
Volts  
mA  
CEO  
EBO  
CBO  
Collector–Base Voltage  
Collector Current — Continuous  
70  
I
C
150  
150  
Detector Power Dissipation @ T = 25°C  
P
D
mW  
A
with Negligible Power in Input LED  
Derate above 25°C  
1.76  
mW/°C  
TOTAL DEVICE  
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Ambient Operating Temperature Range  
T
55 to +100  
55 to +150  
260  
°C  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 sec, 1/16from case)  
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
GlobalOptoisolator is a trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995  

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