Datasheet > H05N60E

H05N60E

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	61K
描述
N-Channel Power Field Effect Transistor

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数据手册

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H05N60E 数据手册

Spec. No. : MOS200603

Issued Date : 2006.02.01

Revised Date : 2006.02.07

Page No. : 5/5

HI-SINCERITY

MICROELECTRONICS CORP.

Soldering Methods for HSMC’s Products

1. Storage environment: Temperature=10^oC~35^oC Humidity=65%±15%

2. Reflow soldering of surface-mount devices

Figure 1: Temperature profile

Critical Zone

to T

Ramp-up

Tsmax

Tsmin

Preheat

Ramp-down

t 25^oC to Peak

Time

Profile Feature

Average ramp-up rate (T_Lto T_P)

Preheat

Sn-Pb Eutectic Assembly

<3^oC/sec

Pb-Free Assembly

<3^oC/sec

- Temperature Min (Ts_min

)

100^oC

150^oC

200^oC

- Temperature Max (Ts_max

- Time (min to max) (ts)

Tsmax to T_L

)

60~120 sec

60~180 sec

- Ramp-up Rate

<3^oC/sec

Time maintained above:

- Temperature (T_L)

- Time (t_L)

183^oC

217^oC

60~150 sec

240^oC +0/-5^oC

60~150 sec

260^oC +0/-5^oC

Peak Temperature (T_P)

Time within 5^oC of actual Peak

10~30 sec

20~40 sec

Temperature (t_P)

Ramp-down Rate

<6^oC/sec

Time 25^oC to Peak Temperature

<6 minutes

<8 minutes

3. Flow (wave) soldering (solder dipping)

Products

Pb devices.

Peak temperature

245^oC ±5^oC

Dipping time

10sec ±1sec

260^oC ±5^oC

Pb-Free devices.

H05N60E, H05N60F

HSMC Product Specification

1 2 3 45

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