Spec. No. : MOS200603
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
HI-SINCERITY
MICROELECTRONICS CORP.
H05N60 Series Pin Assignment
H05N60 Series
Tab
N-Channel Power Field Effect Transistor
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
3
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
Features
3
D
2
1
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
H05N60 Series
Symbol:
G
S
Absolute Maximum Ratings
Symbol
ID
Parameter
Drain to Current (Continuous)
Value
5
Units
A
IDM
Drain to Current (Pulsed)
20
A
VGS
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H05N60E (TO-220AB)
V
±30
75
35
W
H05N60F (TO-220FP)
PD
Derate above 25°C
0.56
0.2
H05N60E (TO-220AB)
W/°C
H05N60F (TO-220FP)
Tj, Tstg
EAS
Operating and Storage Temperature Range
-55 to 150
°C
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
250
260
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
TL
°C
H05N60E, H05N60F
HSMC Product Specification