GS74108ATP/J/X
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
6, 7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
512K x 8
4Mb Asynchronous SRAM
SOJ 512K x 8-Pin Configuration
Features
• Fast access time: 6, 7, 8, 10, 12 ns
• CMOS low power operation: 155/135/120/95/85 mA at
minimum cycle time
36
1
A4
NC
35
A5
2
A3
34
A6
3
A2
• Single 3.3 V power supply
33
A7
4
A1
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
32
A8
5
A0
31
6
CE
OE
30
7
DQ1
DQ2
VDD
VSS
DQ3
DQ4
WE
A17
A16
A15
A14
A13
DQ8
J: 400 mil, 36-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
29
8
DQ7
36-pin
400 mil SOJ
28
9
VSS
27
26
25
24
23
22
21
20
19
10
11
12
13
14
15
16
17
18
VDD
DQ6
DQ5
A9
Description
The GS74108A is a high speed CMOS Static RAM organized
as 524,288 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS74108A operates
on a single 3.3 V power supply and all inputs and outputs are
TTL-compatible. The GS74108A is available in 400 mil SOJ,
400 mil TSOP Type-II, and 6 mm x 10 mm FP-BGA packages.
A10
A11
A12
A18
NC
FP-BGA 256K x 16 Bump Configuration (Package X)
Pin Descriptions
1
2
3
4
5
6
Symbol
A0–A18
DQ1–DQ8
CE
Description
Address input
A
B
C
D
E
F
LB
OE
A0
A3
A1
A4
A6
A7
A2
NC
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
DQ16 UB
CE DQ1
DQ2 DQ3
DQ4 VDD
WE
DQ14 DQ15 A5
VSS DQ13 A17
VDD DQ12 NC
DQ11 DQ10 A8
OE
V
DD
A16 DQ5 VSS
V
Ground
SS
A9
DQ7 DQ6
WE DQ8
NC
No connect
G
H
DQ9 NC
NC A12
A10
A13
A11
A14
A15
NC
6 x 10 mm Bump Pitch
Rev: 1.02 3/2002
1/14
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.