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GS74108AGP-7 PDF预览

GS74108AGP-7

更新时间: 2024-10-01 15:44:23
品牌 Logo 应用领域
GSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 404K
描述
Standard SRAM, 512KX8, 7ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

GS74108AGP-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.29
Is Samacsys:N最长访问时间:7 ns
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:PURE MATTE TIN
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

GS74108AGP-7 数据手册

 浏览型号GS74108AGP-7的Datasheet PDF文件第2页浏览型号GS74108AGP-7的Datasheet PDF文件第3页浏览型号GS74108AGP-7的Datasheet PDF文件第4页浏览型号GS74108AGP-7的Datasheet PDF文件第5页浏览型号GS74108AGP-7的Datasheet PDF文件第6页浏览型号GS74108AGP-7的Datasheet PDF文件第7页 
GS74108ATP/J/X  
SOJ, TSOP, FP-BGA  
Commercial Temp  
Industrial Temp  
7, 8, 10, 12 ns  
3.3 V VDD  
Center VDD and VSS  
512K x 8  
4Mb Asynchronous SRAM  
SOJ 512K x 8-Pin Configuration  
Features  
• Fast access time: 7, 8, 10, 12 ns  
• CMOS low power operation: 135/120/95/85 mA at minimum  
cycle time  
36  
1
A4  
NC  
35  
A5  
2
A3  
34  
A6  
3
A2  
• Single 3.3 V power supply  
33  
A7  
4
A1  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40° to 85°C  
• Package line up  
32  
A8  
5
A0  
31  
6
CE  
OE  
30  
7
DQ1  
DQ2  
VDD  
VSS  
DQ3  
DQ4  
WE  
A17  
A16  
A15  
A14  
A13  
DQ8  
J: 400 mil, 36-pin SOJ package  
TP: 400 mil, 44-pin TSOP Type II package  
X: 6 mm x 10 mm Fine Pitch Ball Grid Array  
package  
29  
8
DQ7  
36-pin  
400 mil SOJ  
28  
9
VSS  
27  
26  
25  
24  
23  
22  
21  
20  
19  
10  
11  
12  
13  
14  
15  
16  
17  
18  
VDD  
DQ6  
DQ5  
A9  
Description  
The GS74108A is a high speed CMOS Static RAM organized  
as 524,288 words by 8 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS74108A operates  
on a single 3.3 V power supply and all inputs and outputs are  
TTL-compatible. The GS74108A is available in 400 mil SOJ,  
400 mil TSOP Type-II, and 6 mm x 10 mm FP-BGA packages.  
A10  
A11  
A12  
A18  
NC  
FP-BGA 512K x 8 Bump Configuration (Package X)  
Pin Descriptions  
1
2
3
4
5
6
Symbol  
A0–A18  
DQ1–DQ8  
CE  
Description  
Address input  
A
B
C
D
E
F
NC  
OE  
A2  
A1  
A6  
A5  
A7  
NC  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
DQ1 NC  
DQ2 NC  
CE DQ8  
NC DQ7  
WE  
A0  
A4  
OE  
VSS  
VDD  
NC  
NC  
A18  
A17  
A13  
A14  
A15  
A3  
NC  
NC  
VDD  
VSS  
V
DD  
A9  
V
Ground  
SS  
DQ3 NC  
DQ4 NC  
A10  
A11  
A12  
NC DQ6  
WE DQ5  
NC  
No connect  
G
H
NC  
A16  
A8  
NC  
6 x 10 mm  
Rev: 1.03a 10/2002  
1/13  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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