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GPP10D-E3/73 PDF预览

GPP10D-E3/73

更新时间: 2024-11-28 19:51:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 62K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

GPP10D-E3/73 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:LOW LEAKAGE CURRENT外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GPP10D-E3/73 数据手册

 浏览型号GPP10D-E3/73的Datasheet PDF文件第2页浏览型号GPP10D-E3/73的Datasheet PDF文件第3页浏览型号GPP10D-E3/73的Datasheet PDF文件第4页 
GPP10A thru GPP10M  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
FEATURES  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-204AL (DO-41)  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
IF(AV)  
1.0 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
30 A  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over passivated chip  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
5.0 μA  
VF  
1.1 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
150 °C  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GPP10A GPP10B GPP10D GPP10G GPP10J GPP10K GPP10M UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
current 0.375" (9.5 mm) lead length  
at TA = 75 °C  
IF(AV)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load  
IFSM  
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length TA = 75 °C  
IR(AV)  
30  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 88641  
Revision: 28-Oct-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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