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GP10D/4F PDF预览

GP10D/4F

更新时间: 2024-01-01 03:51:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 324K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

GP10D/4F 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-41包装说明:PLASTIC, DO-41, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:3 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GP10D/4F 数据手册

 浏览型号GP10D/4F的Datasheet PDF文件第2页浏览型号GP10D/4F的Datasheet PDF文件第3页浏览型号GP10D/4F的Datasheet PDF文件第4页 
GP10A thru GP10Y  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
®
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1600 V  
30 A, 25 A  
5.0 µA  
*
VF  
1.1 V, 1.2 V, 1.3 V  
175 °C  
d
e
t
n
e
Tj max.  
t
a
P
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for both consumer and automotive applications  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
A
B
D
G
J
K
M
N
Q
T
V
W
Y
Unit  
V
Maximum repetitive peak reverse voltage  
50 to 1600 V (See Fig. 5)  
1.0  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length (See fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
30  
25  
A
Maximum full load reverse current, full cycle average,  
0.375" (9.5 mm) lead lengths at TA = 75 °C  
IR(AV)  
30  
µA  
Operating junction and storage temperature range  
TJ,TSTG  
- 65 to + 175  
- 65 to + 150  
°C  
Document Number 88637  
14-Sep-05  
www.vishay.com  
1

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