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GNM1M2R71H102MA01 PDF预览

GNM1M2R71H102MA01

更新时间： 2024-01-04 15:24:01
品牌 Logo 应用领域
村田 - MURATA /
页数 文件大小 规格书
24页 602K
描述
CHIP MONOLITHIC CERAMIC CAPACITOR, CAPACITOR ARRAYS FOR GENERAL

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GNM1M2R71H102MA01 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：CHIP,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8532.25.00.45风险等级：5.79
电容：0.001 µF电容器类型：ARRAY/NETWORK CAPACITOR
JESD-609代码：e3长度：1.37 mm
安装特点：SURFACE MOUNT负容差：20%
网络类型：ISOLATED C NETWORK元件数量：1
功能数量：2端子数量：4
最高工作温度：125 °C最低工作温度：-55 °C
封装代码：CHIP封装形状：RECTANGULAR PACKAGE
包装方法：TR, PAPER, 7 INCH正容差：20%
额定（直流）电压（URdc）：50 V座面最大高度：0.6 mm
表面贴装：YES温度特性代码：X7R
温度系数：15% ppm/ °C端子面层：Tin (Sn)
端子节距：0.64 mm端子形状：WRAPAROUND
宽度：1 mmBase Number Matches：1

GNM1M2R71H102MA01 数据手册

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■SPECIFICATIONS AND TEST METHODS  
Specification  
No  
Item  
Test Method  
Temperature  
Compensating Type  
High Dielectric Type  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Set the capacitor at 40±2℃ and in 90 to 95% humiduty  
for 500±12 hours.  
16 Humidit  
Steady State  
Remove and set for 24±2 hours at room temperature, then  
measure.  
Appearance No defects or abnormalities.  
Capacitance Within ±5% or± 0.5pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
Change  
Q/D.F.  
(Whichever is larger)  
30pF and over:Q≧350  
10pF and over  
［B1,R1,R6,R7］  
W.V.: 25Vmin. :0.05max.  
30pF and below:Q≧275+5/2C W.V.:16/10/6.3V :0.05max.  
10pF and below:Q≧200+10C  
[F1,F5]  
C:Nominal Capacitance(pF)  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 1,000MW or 50W·F(Whichever is smaller)  
Dielectric  
Strength  
No failure.  
Apply the rated voltage at 40±2℃ and 90 to 95% humidity  
for 500±12 hours. Remove and set for 24±2 hours at room  
temprature then muasure. The charge/discharge current is  
less than 50mA.  
17 Humidity Load  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Appearance No defects or abnormalities.  
Capacitance  
Change  
Within ±7.5% or±0.75pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
(Whichever is larger)  
Q/D.F.  
30pF and over:Q≧200  
［B1,R1,R6,R7］  
30pF and below:Q≧100+10/3C  
W.V.: 25Vmin. :0.05max.  
W.V.:16/10/6.3V :0.05max.  
C:Nominal Capacitance(pF)  
[F1,F5]  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 500MΩ or 25Ω·F(Whichever is smaller)  
Dielectric  
Strength  
No failure.  
18 High Temperature  
Load  
The measured and observed characteristics should satisfy  
the specifications in the following table.  
Apply 200% of the rated voltage at the maximum operating  
temperature ±3℃ for 1000±12 hours.  
Set for 24±2 hours at room temperature, then measure.  
The charge/discharge current is less than 50mA.  
Appearance No defects or abnormalities.  
Capacitance Within ±3% or ±0.3pF  
B1,R1,R6,R7 :Within ±12.5%  
F1,F5 :Within ±30%  
Change  
(Whichever is larger)  
･Initial measurement for high dielectric constant type.  
Apply 200% of the rated DC voltage at the maximun operating  
temperature ±3C for one hour. Remove and set for  
24±2 hours at room temperature.  
Q/D.F.  
30pF and over:Q≧350  
［B1,R1,R6,R7］  
10pF and over  
W.V.: 25Vmin. :0.04max.  
Perform initial measurement.  
30pF and below: Q≧275+5/2C W.V.:16/10/6.3V :0.05max.  
10pF and below:Q≧200+10C  
[F1,F5]  
C:Nominal Capacitance (pF)  
W.V.:25Vmin : 0.075max.  
W.V.:16V : 0.1max.  
I.R.  
More than 1,000MW or 50W·F(Whichever is smaller)  
Table A-1  
Char.  
2C  
Capacitance Change from 20C (%)  
Nominal Values  
(ppm/C) *  
-55  
-25  
-10  
Max.  
0.82  
Min.  
-0.45  
Max.  
0.49  
Min.  
-0.27  
Max.  
0.33  
Min.  
-0.18  
0±60  
* Nominalvaluesdenotethe temperaturecoefficientwithina rangeof20Cto 125C  
Table A-2  
Capacitance Change from 25C (%)  
Nominal Values  
(ppm/C) *  
Char.  
-55  
-30  
-10  
Max.  
0.58  
Min.  
-024  
Max.  
0.40  
Min.  
-0.17  
Max.  
0.25  
Min.  
5C  
0±30  
-0.11  
* Nominalvaluesdenotethe temperaturecoefficientwithina rangeof25Cto 125C  
JEMCCS-0001K  
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