品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 二极管 | |
页数 | 文件大小 | 规格书 |
4页 | 138K | |
描述 | ||
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,5V V(RWM),AXIAL-9 |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.92 |
击穿电压标称值: | 5.3 V | 最大钳位电压: | 6.6 V |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-609代码: | e0 |
极性: | UNIDIRECTIONAL | 最大重复峰值反向电压: | 5 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
GMP-5B | MICROSEMI | TRANSIENT ABSORPTION ZENER |
获取价格 |
|
GMP-5BE3 | MICROSEMI | Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS |
获取价格 |
|
GMP-5E3 | MICROSEMI | Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS |
获取价格 |
|
GMP60N06 | GSME | N-channel 60V, 60A, TO-220 PowerMOSFET |
获取价格 |
|
GMP80N75 | GSME | N-channel 75V 10mΩ, 80A TO-220 Trench Power |
获取价格 |
|
GMPCR06 | GTM | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V |
获取价格 |