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GMPCR06

更新时间： 2022-04-23 23:00:11
品牌 Logo 应用领域
GTM 可控硅整流器
页数 文件大小 规格书
3页 217K
描述
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V

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GMPCR06 数据手册

 浏览型号GMPCR06的Datasheet PDF文件第2页浏览型号GMPCR06的Datasheet PDF文件第3页 
ISSUED DATE :2005/12/21  
REVISED DATE :2006/03/29B  
GTM  
CORPORATION  
GMPCR06  
SENSIT IVE GAT E SILICON CONT ROLLED RECT IFIERS  
REVERSE BLOCKING T HYRISTORS 0.8A, 400V  
Description  
The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp  
drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.  
Features  
ԦSensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits  
ԦOn-state Current Rating of 0.8A RMS at 80к  
ԦHigh Surge Current Capability 10A  
ԦMinimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design  
ԦImmunity to dV/dt - 20 V/ꢀsec Minimum at 110к  
ԦGlass-Passivated Surface for Reliability and Uniformity  
Package Dimensions  
SOT-89  
Millimeter  
Millimeter  
Min. Max.  
3.00 REF.  
1.50 REF.  
REF.  
REF.  
Min.  
4.4  
Max.  
4.6  
A
B
C
D
E
F
G
H
I
J
K
L
4.05  
1.50  
1.30  
2.40  
0.89  
4.25  
1.70  
1.50  
2.60  
1.20  
0.40  
1.40  
0.35  
0.52  
1.60  
0.41  
5° TYP.  
0.70 REF.  
M
Absolute Maximum Ratings (T  
J=25к unless otherwise noted)  
Rating  
Peak Repetitive Off-State Voltage(Note1)  
(T =-40 to 110к, Sine Wave, 50 to 60Hz; Gate open)  
On-state RMS Current, (T =80к) 180шConduction Angles  
Symbol  
Value  
Unit  
V
V
DRM  
RRM  
400  
V
J
C
IT(RMS)  
0.8  
10  
A
A
A2  
S
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, T  
J
=25к)  
I
TSM  
Circuit Fusing Consideration (t=8.3ms)  
I2  
t
0.415  
100  
10  
Forward Peak Gate Power (T  
Forward Average Gate Power (T  
Forward Peak Gate Current (T =25к, Pulse Width ≤ 1.0ꢀs)  
Reverse Peak Gate Voltage (T =25к, Pulse Width ≤ 1.0ꢀs)  
A=25к, Pulse Width ≤ 1.0ꢀs)  
PGM  
mW  
mW  
A
A=25к, t=8.3ms)  
PG(AV)  
A
I
GM  
1.0  
A
VGRM  
5.0  
V
Operating Junction Temperature Rang @ Rate VRRM and VDRM  
Storage Temperature Rage  
T
J
-40 ~ +110  
-40 ~ +150  
к
Tstg  
к
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress  
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is  
not implied, damage may occur and reliability may be affected.  
Note 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage:  
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall  
not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
GMPCR06  
Page: 1/3  
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