Datasheet > GMP-5BE3

GMP-5BE3

更新时间： 2024-02-27 01:03:28

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
2页	125K
描述
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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GMP-5BE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
最小击穿电压：	5.3 V	外壳连接：	ISOLATED
最大钳位电压：	6.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

GMP-5BE3 数据手册

GMP-5, GMP-5A, GMP-5B, e3 SERIES

TRANSIENT ABSORPTION ZENER

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The GMP-5 series is a low voltage Transient Voltage Suppressor designed

for the protection of integrated circuits with very low Clamping Voltages (V_C).

Due to their very fast response time, protection level and high discharge

capability, they are extremely effective in providing protection against 5-volt

line transients generated by: voltage reversals, capacitive or inductive load

switching, electromechanical switching, electrostatic discharge and

electromagnetic coupling.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

500 Watts Peak Pulse Power dissipation.

Working Voltage of 5 volts

•

The GMP-5 is a low voltage transient suppressor

designed for the protection of integrated circuits.

Characterized by a very low clamping voltage

together with a low standoff voltage, GMP-5’s afford

a high degree of protection to: TTL, ECL, DTL,

MOS, CMOS, VMOS, HMOS, NMOS and static

memory circuits susceptible to 5-volt line transients.

Protects TTL, ECL, DTL, MOS, CMOS, and MSI

Integrated circuits.

•

Low clamping factor

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

500 Watts of Peak Pulse Power dissipation at

25^oC.

•

CASE: Void free transfer molded thermosetting

plastic.

t_clamping(0 volts to BV min.): Less than 1x10-12

seconds (theoretical)

•

FINISH: Tin-lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

Operating and Storage Temperatures: -65^oC to

•

POLARITY: Band denotes cathode.

WEIGHT: 0.7 gram (approx.)

MOUNTING POSITION: Any.

+175^oC.

Forward surge rating: 50 amps 1/120 second at

25^oC.

Steady State power dissipation: 5.0 W @ T_L=

75^oC, Lead Length = 3/8”

Repetition rate (duty cycle): .05%

ELECTRICAL CHARACTERISTICS @ 25^oC

MINIMUM

MAXIMUM

CLAMPING

VOLTAGE

@ I_PP1= 1A

(Fig. 2)

MAXIMUM

CLAMPING

VOLTAGE

@ I_PP2= 1A

(Fig. 2)

MAXIMUM

PEAK

PULSE

CURRENT

(Fig 2)

MAXIMUM

REVERSE

LEAKAGE

@V_WM

BREAKDOWN

VOLTAGE

@ 1mA

MAXIMUM

PEAK PULSE

CURRENT

STAND OFF

VOLTAGE

Note 1

MICROSEMI

PART

V (min)

I_D

(1.2x50 μsec )

V_WM

V_(BR)

V_C

I_PP3

NUMBER

Volts

μA

Volts

Amps

GMP – 5

GMP – 5A

GMP – 5B

5.0

300

100

300

5.3

5.5

5.3

6.7

6.4

6.9

6.6

215

Vf at 50 amps peak, 8.3 msec sine wave = 3.5 volts maximum

NOTE 1: A TVS is usually selected according to the reverse “Stand Off Voltage” (V_WM) which should be equal to or greater than the DC or

continuous peak operating voltage level.

7-09-2007 REV A

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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