Datasheet > GM71S18160C(CL)

GM71S18160C(CL)

更新时间： 2022-01-19 14:17:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	112K
描述
1Mx16\|5V\|1K\|5/6\|FP/EDO DRAM - 16M

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数据手册

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GM71S18160C(CL) 数据手册

GM71C18160C

GM71CS18160CL

R ead- Modify-W r ite Cycle

GM71C(S)18160 GM71C(S)18160 GM71C(S)18160

C/CL-5 C/CL-6 C/CL-7

Unit

Note

Symbol

Parameter

Min Max Min Max Min Max

R W C

Read-Modify-Write Cycle Time

RAS to WE Delay Time

131

155

181

tR W D

tC W D

CAS to WE Delay Time

tAWD

Column Address to WE Delay Time

OE Hold Time from WE

tOEH

R efresh Cycle

GM71C(S)18160 GM71C(S)18160 GM71C(S)18160

C/CL-5 C/CL-6 C/CL-7

Unit

Note

Symbol

Parameter

Min Max Min Max Min Max

tC S R

CAS Setup Time

(CAS-before-RAS Refresh Cycle)

CHR

CAS Hold Time

(CAS-before-RAS Refresh Cycle)

R A S Precharge to CAS Hold Time

tRPC

F a st Page Mode Cycle

GM71C(S)18160 GM71C(S)18160 GM71C(S)18160

C/CL-5 C/CL-6 C/CL-7

Unit

Note

Symbol

Parameter

Min Max Min Max Min Max

Fast Page Mode Cycle Time

100,000

Fast Page Mode RAS Pulse Width

tR A S P

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

9,17,22

tACP

tRHCP

F a st Page Mode Read-Modify-W r ite Cycle

GM71C(S)18160 GM71C(S)18160 GM71C(S)18160

C/CL-5 C/CL-6 C/CL-7

Unit

Note

Symbol

Parameter

Min Max Min Max Min Max

PRWC

Fast Page Mode Read-Modify-Write

Cycle Time

tCPW

WE Delay Time from CAS Precharge

14,22

Rev 0.1 / Apr’01

1...4 5 678 9 10

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