Datasheet > GM71S17803C(CL)

GM71S17803C(CL)

更新时间： 2022-01-19 20:39:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
9页	105K
描述
2Mx8\|5V\|2K\|5/6\|FP/EDO DRAM - 16M

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GM71S17803C(CL) 数据手册

GM71C17803C

GM71CS17803CL

DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)

Symbol

Parameter

Min Max Unit Note

Output Level

Output "H" Level Voltage (IOUT = -2mA)

2.0

Output Level

Output "L" Level Voltage (IOUT = 2mA)

0.4

50ns

60ns

70ns

130

120

110

CC1

Operating Current

Average Power Supply Operating Current

(RAS, CAS Cycling: tRC = tRC min)

1, 2

CC2

CC3

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS = VIH, DOUT = High-Z)

50ns

60ns

70ns

130

120

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

110

130

120

110

CC4

EDO Page Mode Current

Average Power Supply Current

EDO Page Mode

50ns

60ns

70ns

1, 3

(tHPC = tHPC min)

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >VCC - 0.2V, DOUT = High-Z)

CC5

CC6

CC7

150

50ns

60ns

130

120

CAS-before-RAS Refresh Current

(tRC = tRC min)

70ns

110

Battery Back Up Operating Current(Standby with CBR Refresh)

(CBR refresh, tRC=62.5us, tRAS<=0.3us,

500

4,5

OUT=High-Z ,CMOS interface)

Standby Current RAS = VIH

CAS = VIL

CC8

CC9

OUT = Enable

Self-Refresh Mode Current

(RAS, CAS<=0.2V, DOUT=High-Z)

300

Input Leakage Current

Any Input (0V<=VIN<= 6V)

L(I)

-10

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

L(O)

Note: 1. ICC depends on output load condition when the device is selected.

CC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL

3. Address can be changed once or less while CAS = VIH

4. CAS = L (<=0.2V) while RAS = L (<=0.2V).

5. L-version.

Rev 0.1 / Apr’01

1 234 5 6 7...9

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