Datasheet > GM71CS17403CLT-6

GM71CS17403CLT-6

更新时间： 2022-01-20 00:16:00

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	100K
描述
x4 EDO Page Mode DRAM

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数据手册

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GM71CS17403CLT-6 数据手册

GM71C(S)17403C/CL

DC Electrical Characteristics (VCC = 5.0V+/-10%, VSS = 0V, TOPR = 0 ~ 70C)

Symbol

Parameter

Min Max Unit Note

Output Level

Output "H" Level Voltage (IOUT = -2mA)

2.0

Output Level

Output "L" Level Voltage (IOUT = 2mA)

0.4

50ns

60ns

70ns

120

110

Operating Current

Average Power Supply Operating Current

(RAS, CAS Cycling : tRC = tRC min)

CC1

1, 2

100

Standby Current (TTL)

Power Supply Standby Current

(RAS, CAS = VIH, DOUT = High-Z)

CC2

CC3

50ns

60ns

100

RAS Only Refresh Current

Average Power Supply Current

RAS Only Refresh Mode

(tRC = tRC min)

70ns

50ns

60ns

EDO Page Mode Current

Average Power Supply Current

EDO Page Mode

CC4

1, 3

(tHPC = tHPC min)

70ns

Standby Current (CMOS)

Power Supply Standby Current

(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)

CC5

CC6

150

100

50ns

60ns

70ns

CAS-before-RAS Refresh Current

(tRC = tRC min)

Battery Backup Operating Current(Standby with CBR Refresh)

(CBR refresh, tRC = 62.5us, tRAS <= 0.3us,

CC7

CC8

350

4,5

OUT = High-Z, CMOS interface)

Standby Current RAS = VIH

CAS = VIL

OUT = Enable

Input Leakage Current

Any Input (0V<=VIN<= 6V)

L(I)

-10

L(O)

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)

Note: 1. ICC depends on output load condition when the device is selected.

CC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL

3. Address can be changed once or less while CAS = VIH

4. CAS = L (<=0.2) while RAS = L (<=0.2).

5. L-version.

Rev 0.1 / Apr’01

1 234 5 6 7...10

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