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GM71C4400CR-80 PDF预览

GM71C4400CR-80

更新时间: 2024-02-01 01:56:37
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 103K
描述
Fast Page DRAM, 1MX4, 80ns, CMOS, PDSO20,

GM71C4400CR-80 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:TSOP, TSOP20/26,.36Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
最长访问时间:80 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
内存密度:4194304 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4端子数量:20
字数:1048576 words字数代码:1000000
最高工作温度:70 °C最低工作温度:
组织:1MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP20/26,.36封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:5 V
认证状态:Not Qualified刷新周期:1024
反向引出线:YES自我刷新:NO
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.09 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

GM71C4400CR-80 数据手册

 浏览型号GM71C4400CR-80的Datasheet PDF文件第3页浏览型号GM71C4400CR-80的Datasheet PDF文件第4页浏览型号GM71C4400CR-80的Datasheet PDF文件第5页浏览型号GM71C4400CR-80的Datasheet PDF文件第6页浏览型号GM71C4400CR-80的Datasheet PDF文件第8页浏览型号GM71C4400CR-80的Datasheet PDF文件第9页 
GM71C(S)4400C/CL  
LG Semicon  
Test Mode Cycle  
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400  
C/CL-60 C/CL-70 C/CL-80  
Unit Note  
Symbol  
Parameter  
Min Max Min Max Min Max  
t
t
WS  
Test Mode WE Setup Time  
Test Mode WE Hold Time  
0
-
-
0
-
-
0
-
-
ns  
ns  
WH  
10  
10  
10  
Counter Test Cycle  
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400  
C/CL-60 C/CL-70 C/CL-80  
Unit Note  
Symbol  
Parameter  
Min Max Min Max Min Max  
40 40 40  
t
CPT  
CAS Precharge Time in Counter Test  
Cycle  
-
-
-
ns  
Notes:  
AC Measurements assume tT = 5ns.  
1.  
2.  
Assumes that tRCD<=tRCD(max) and tRAD<=tRAD(max). If tRCD or tRAD is greater than the maximum  
recommended value shown in this table, tRAC exceeds the value shown.  
§Ü  
Measured with a load circuit equivalent to 2TTL loads and 100  
Assumes that tRCD>=tRCD(max) and tRAD<=tRAD(max).  
Assumes that tRCD<=tRCD(max) and tRAD>=tRAD(max).  
.
3.  
4.  
5.  
6.  
tOFF(max) defines the time at which the output achieves the open circuit condition and is not  
referenced to output voltage levels.  
7. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Also,  
transition times are measured between VIH and VIL.  
Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a  
reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is  
controlled exclusively by tCAC.  
8.  
9. Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a  
reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is  
controlled exclusively by tAA.  
7

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