Datasheet > GM1386

GM1386

更新时间： 2024-02-13 15:46:22

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	288K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GM1386 数据手册

ISSUED DATE :2004/02/09

REVISED DATE :2005/08/24B

GTM

CORPORATION

GM1386

P N P E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GM1386 is an epitaxial planar type PNP silicon transistor.

Features

ԦLow collector saturation voltage : VCE (sat)= -0.35V(Typ.) @ I

ԦExcellent DC current gain characteristics.

Package Dimensions

B=-4A/-0.1A

SOT-89

Millimeter

REF.

Min.

4.4

Max.

4.6

Min.

3.00 REF.

1.50 REF.

Max.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Symbol

Tstg

Ratings

+150

-55~+150

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

CBO

-30

-20

-6

VCEO

EBO

-5

Collector Current (Pulse)*¹

-10

Total Power Dissipation

* 1. Single pulse, PW=10ms.

0.5 (2.0*²)

* 2. When mounted on a 40*40*0.7 mm ceramic board.

Electrical Characteristics(Ta = 25к,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

-30

-20

-6

=-50uA , I

=-1mA, IB

=-100mA

=-500mA

=50mA, f=30MHz

=0, f=1MHz

E=-50uA ,IC

CBO

-0.5

-1.0

390

CB=-20V, IE

EBO

EB=-5V, I

=-4A, I

*VCE(sat)

*hFE

CE=-2V, I

CE=-6V, IE

CB=-20V, IE

120

MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

82 ~ 180

120 ~ 270

180 ~ 390

GM1386

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