Datasheet > GM1213

GM1213

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	398K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GM1213 数据手册

ISSUED DATE :2003/05/07

REVISED DATE :2004/12/14B

GTM

CORPORATION

GM1213

P N P E P I T A X I A L P L A N A R T R A N S I S T O R

Description

he GM1213 is designed for using in power amplifier applications or power switching applications.

Package Dimensions

SOT-89

Millimeter

REF.

Min.

4.4

Max.

4.6

Min.

3.00 REF.

1.50 REF.

Max.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings Ta=25к

Parameter

Symbol

Ratings

Unit

Junction Temperature

+150

-55 ~ +150

-50

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current at

Tstg

VCBO

VCEO

VEBO

-50

-5

-2

Base current

-0.4

500

1000

Collector Power Dissipation

PC(Note 1)

Characteristics at Ta = 25к

Note 1:Mounted on ceramic substrate (250mm²x0.8t)

Characteristics

Symbol

Min.

-50

Typ.

Max.

-0.1

Unit

Test Conditions

VCB=-50V,I =0

VEB=-5V,Ic=0

IC=-10mA,I =0

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

Collector-emitter breakdown voltage

V(BR)CEO

240

-0.5

-1.2

VCE=-2V,Ic=-0.5A

VCE=-2V,Ic=-2.0A

IC=-1A, IB=-0.05A

DC current gain

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat)

VBE(sat)

120

MHz VCE=-2V, IC=-0.5A

Collector output capacitance

Turn-on time

Cob

VCB=-10V,IE=0, f=1MHz

ton

0.1

ꢀs

Storage time

tstg

1.0

ꢀs

Switching time

Fall time

0.1

Classification Of hFE

Rank

Range

70-140

120-240

GM1213

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