Datasheet > GI810/4G-E3

GI810/4G-E3

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	328K
描述
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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GI810/4G-E3 数据手册

GI810 thru GI818

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.1

0.01

100

0.8

Instantaneous Forward Voltage (V)

0.4

0.6

1.0

1.2

1.4

1.6

1.8

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

TJ = 125 °C

T^J= 75 °C

0.1

T^J= 25 °C

0.1

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t, Pulse Duration (sec.)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

Dia.

1.0 (25.4)

min.

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

Dia.

1.0 (25.4)

min.

Document Number 88628

12-Oct-05

www.vishay.com

1 234

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