Datasheet > GI250-2/64

GI250-2/64

更新时间： 2022-12-01 22:24:38

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	290K
描述
Rectifier Diode, 1 Element, 0.25A, 2000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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GI250-2/64 数据手册

GI250-1 thru GI250-4

Vishay General Semiconductor

High Voltage Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

0.25 A

1000 V to 4000 V

15 A

5.0 µA

V_F

3.5 V

T_jmax.

175 °C

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602,

DO-204AL (DO-41)

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low leakage current

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in rectification of high voltage power supplies,

inverters, converters and freewheeling diodes appli-

cation

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol GI250-1 GI250-2 GI250-3 GI250-4

Unit

Maximum repetitive Peak reverse voltage

V_RRM

V_RMS

V_DC

1000

700

2000

1400

2000

3000

2100

3000

4000

2800

4000

Maximum RMS voltage

Maximum DC blocking voltage

1000

Maximum average forward rectified current 0.375" (9.5 mm) lead length

at T_A= 75 °C

I_F(AV)

0.25

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number 88625

13-Sep-05

www.vishay.com

12 3 4

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