Datasheet > GD75PIL120C6SNF

GD75PIL120C6SNF

更新时间： 2024-04-09 19:00:49

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	450K
描述
C6.3.PIM

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GD75PIL120C6SNF 数据手册

GD75PIL120C6SNF

IGBT Module

Diode-brake Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

I_C=25A,V_GE=0V,T_j=25^oC

I_C=25A,V_GE=0V,T_j=125^oC

I_C=25A,V_GE=0V,T_j=150^oC

Min. Typ. Max. Unit

1.78 2.18

Diode Forward

Voltage

V_F

1.88

1.91

1.1

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=425A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=425A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=425A/μs,V_GE=-15V

Reverse Recovery

Energy

μC

V_R=600V,I_F=25A,

I_RM

T_j=25^oC

E_rec

Q_r

0.80

3.2

μC

V_R=600V,I_F=25A,

I_RM

T_j=125^oC

E_rec

Q_r

1.38

4.5

μC

V_R=600V,I_F=25A,

I_RM

T_j=150^oC

E_rec

1.96

NTC Characteristics T_C=25^oC unless otherwise noted

Symbol

R₂₅

∆R/R

P₂₅

Parameter

Test Conditions

Min. Typ. Max. Unit

Rated Resistance

5.0

kΩ

Deviation of R₁₀₀T_C=100^oC,R₁₀₀=493.3Ω

-5

Power Dissipation

20.0

R₂=R₂₅exp[B_25/50(1/T₂-

1/(298.15K))]

B_25/50

B-value

3375

10/3/2014

6/13

ZY01

1...3 4 567 8 9...13

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