Datasheet > GD50PIT120C6SN_G8

GD50PIT120C6SN_G8

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	284K
描述
C6.3.PIM

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GD50PIT120C6SN_G8 数据手册

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GD50PIT120C6SN_G8

IGBT Module

Module Characteristics T_C=25^oC unless otherwise noted

Symbol

L_CE

Parameter

Min.

Typ.

Max.

Unit

Stray Inductance

R_CC’+EE’

R_AA’+CC’

4.00

3.00

Module Lead Resistance,Terminal to Chip

mΩ

Junction-to-Case (per IGBT-inverter)

Junction-to-Case (per Diode-inverter)

Junction-to-Case (per Diode-rectifier)

Junction-to-Case (per IGBT-brake-chopper)

Junction-to-Case (per Diode-brake-chopper)

Case-to-Heatsink (per IGBT-inverter)

Case-to-Heatsink (per Diode-inverter)

Case-to-Heatsink (per Diode-rectifier)

Case-to-Heatsink (per IGBT-brake-chopper)

Case-to-Heatsink (per Diode-brake-chopper)

Case-to-Heatsink (per Module)

0.484

0.727

0.651

0.628

1.267

R_thJC

K/W

0.140

0.211

0.189

0.182

0.368

0.009

R_thCH

K/W

Mounting Torque, Screw:M5

Weight of Module

3.0

6.0

N.m

300

10/21/2015

7/13

RN02

1...4 5 678 9 10...13

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