Datasheet > GD14NC60K

GD14NC60K

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
16页	436K
描述
N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT

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GD14NC60K 数据手册

STGB14NC60K - STGD14NC60K

Electrical characteristics

Min. Typ. Max. Unit

Table 5.

Symbol

Switching on/off (inductive load)

Parameter

Turn-on delay time

Current rise time

(di/dt)_onTurn-on current slope

Test condictions

t_d(on)

t_r

V_CC= 390V, I_C= 7A

R_G= 10Ω, V_GE= 15V,

Tj= 25°C (see Figure 16)

22.5

8.5

700

A/µs

t_d(on)

t_r

Turn-on delay time

Current rise time

V_CC= 390V, I_C= 7A

R_G= 10Ω, V_GE= 15V,

Tj= 125°C (see Figure 16)

9.5

680

(di/dt)_onTurn-on current slope

A/µs

t_r(V_off) Off voltage rise time

V_cc= 390V, I_C= 7A,

116

t_d(_off

t_f

)

Turn-off delay time

Current fall time

R_GE= 10Ω , V_GE= 15V

T_J= 25°C (see Figure 16)

t_r(V_off) Off voltage rise time

V_cc= 390V, I_C= 7A,

t_d(_off

t_f

)

Turn-off delay time

Current fall time

R_GE= 10Ω , V_GE= 15V

Tj = 125°C (see Figure 16)

196

144

Table 6.

Symbol

Switching energy (inductive load)

Parameter

Test condictions

Min Typ. Max Unit

Eon ⁽¹⁾

Turn-on switching losses

Turn-off switching losses

Total switching losses

V_CC= 390V, I_C= 7A

R_G= 10Ω, V_GE= 15V,

Tj= 25°C (see Figure 16)

µJ

(2)

E_off

155

237

E_ts

Eon ⁽¹⁾

Turn-on switching losses

Turn-off switching losses

Total switching losses

V_CC= 390V, I_C= 7A

R_G= 10Ω, V_GE= 15V,

Tj= 125°C (see Figure 16)

131

370

501

µJ

(2)

E_off

E_ts

1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in

a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the

same temperature (25°C and 125°C)

2. Turn-off losses include also the tail of the collector current.

5/16

1 2 3 456 7 8...16

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