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GBU6A_01 PDF预览

GBU6A_01

更新时间: 2024-02-15 14:04:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 53K
描述
Bridge Rectifiers

GBU6A_01 数据手册

 浏览型号GBU6A_01的Datasheet PDF文件第2页浏览型号GBU6A_01的Datasheet PDF文件第3页 
GBU6A - GBU6M  
Features  
Glass passivated junction.  
Surge overload rating: 175 amperes peak.  
Reliable low cost construction utilizing  
molded plastic technique.  
Ideal for printed circuit board.  
UL certified, UL #E111753.  
+
~
~
-
GBU  
Bridge Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
6A 6B  
6D  
6G  
6J  
6K  
6M  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
50 100 200 400 600 800 1000  
35 70 140 280 420 560 700  
V
V
V
A
DC Reverse Voltage  
(Rated VR)  
50 100 200 400 600 800 1000  
6.0  
IF(AV)  
IFSM  
Average Rectified Forward Current, @ TA = 100°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms Single Half-Sine-Wave  
175  
A
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
12  
18.6  
3.1  
W
Thermal Resistance, Junction to Ambient,* per leg  
Thermal Resistance, Junction to Lead,** per leg  
RθJA  
RθJL  
°C/W  
°C/W  
*Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).  
**Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm).  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
VF  
IR  
Forward Voltage, per element @ 6.0 A  
1.0  
V
Reverse Current, per element @ rated VR  
5.0  
500  
µA  
µA  
A2s  
TA = 25°C  
TA = 125°C  
I2t rating for fusing  
t < 8.35 ms  
127  
2001 Fairchild Semiconductor Corporation  
GBU6A-GBU6M, Rev. C  

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